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| TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge : QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 40 40 20 7.5 30 1.9 1.0 26 7.5 0.08 150 -55 to 150 Unit V V V A W W mJ A mJ C C 1 2 3 4 JEDEC JEITA TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Drain power dissipation (t = 10 s) Drain power dissipation (t = 10 s) Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) Channel temperature Storage temperature range Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPC8022-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit C/W Marking (Note 5) TPC8022 H Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit : mm) FR-4 25.4 x 25.4 x 0.8 (Unit : mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 7.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPC8022-H Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.8 A VGS = 10 V, ID = 3.8 A VDS = 10 V, ID = 3.8 A Min -- 40 25 1.1 Typ. Max 10 10 Unit A A V V m S 27 22 15 650 55 240 3 2.3 35 27 7.5 pF Turn-on time Switching time Fall time ton tf toff RL = 5.3 10 V VGS 0V ID = 3.8 A VOUT 9 ns 4.7 VDD 20 V - Duty < 1%, tw = 10 s = VDD 32 V, VGS = 10 V, ID = 7.5 A VDD 32 V, VGS = 5 V, ID = 7.5 A 2 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge Gate switching charge 18 11 6.2 2.1 2.7 3.5 nC Qg Qgs1 Qgd Qsw VDD 32 V, VGS = 10 V, ID = 7.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = 7.5 A, VGS = 0 V Min -- -- Typ. -- -- Max 30 -1.2 Unit A V Forward voltage (diode) 3 2006-11-17 TPC8022-H ID - VDS 10 10 6 3.8 3.4 Common source Ta = 25C Pulse test 20 10 6 4 ID - VDS 3.8 3.6 Common source Ta = 25C Pulse test 3.4 Drain current ID (A) 4.5 6 4 3.1 Drain current ID (A) 8 5 3.2 16 5 4.5 12 3.2 8 3 2.8 VGS = 2.6 V 0 0 3 4 2.9 2.8 2 2.7 VGS = 2.6 V 0 0 0.2 0.4 0.6 0.8 1.0 4 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 30 VDS - VGS 0.5 25 Drain-source voltage VDS (V) Common source VDS = 10 V Pulse test Common source Ta = 25C Pulse test 0.4 Drain current ID (A) 20 0.3 15 0.2 10 ID = 7.5 A 25 100 Ta = -55C 5 0.1 3.8 1.9 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID RDS (ON) - ID 100 (S) 100 Forward transfer admittance |Yfs| Drain-source ON-resistance RDS (ON) (m) Common source VDS = 10 V Pulse test 4.5 10 Ta = -55C 25 100 VGS = 10 V 10 1 Common source Ta = 25C Pulse test 1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPC8022-H RDS (ON) - Ta 50 Common source 100 Pulse test 40 ID = 7.5 A Common source Ta = 25C Pulse test IDR - VDS (A) Drain-source ON-resistance RDS (ON) (m) 3.8 1.9 10 4.5 3 Drain reverse current IDR 10 30 VGS = 4.5 V 20 10 V 10 ID = 7.5 A, 3.8 A, 1.9 A 1 1 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 VGS = 0 V -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Common source Ta = 25C f = 1 MHz VGS = 0 V 1000 Ciss 2.5 Vth - Ta Gate threshold voltage Vth (V) 2.0 Capacitance C (pF) 1.5 100 Coss 1.0 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 Crss 10 0.1 1 10 100 0 -80 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Dynamic input/output characteristics 50 (W) (V) Drain power dissipation PD 1.6 (2) Device mounted on a glass-epoxy board (b) (Note 2b) 40 16 t = 10 s 1.2 (2) 0.8 Drain-source voltage VDS VDS 30 16 12 20 8 VDD = 32 V 8 0.4 10 VGS 0 0 4 8 12 16 4 0 0 50 100 150 200 0 20 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage VGS (V) (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) Common source ID = 7.5 A Ta = 25C Pulse test 20 TPC8022-H rth - tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) rth (C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 Transient thermal impedance 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width Safe operating area 100 tw (s) ID max (Pulse)* (A) t =1 ms* 10 10 ms* Drain current ID 1 * Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSSmax 10 100 Drain-source voltage VDS (V) 6 2006-11-17 TPC8022-H 7 2006-11-17 |
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